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- W2111129072 abstract "A one-transistor tunnel SRAM cell is proposed and analyzed. The new cell uses the bistability of a tunnel diode pair to latch the body voltage of a MOSFET which then shifts the threshold voltage and enables sensing of the state by measurement of the MOS transistor current. Band-to-band tunneling is used to write the cell." @default.
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- W2111129072 date "2009-05-01" @default.
- W2111129072 modified "2023-09-22" @default.
- W2111129072 title "One-transistor bistable-body tunnel SRAM" @default.
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- W2111129072 doi "https://doi.org/10.1109/icicdt.2009.5166303" @default.
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