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• W2111656670 abstract "High-K/Metal-Gate (HK/MG) reliability TDDB and BTI are investigated systematically for the first time through HfZrO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> gate stack engineering. To meet reliability requirements, it is shown that the HK film thickness, the position and concentration of a Zr dopant, utilizing post deposition anneal (PDA), and decoupled plasma nitridation (DPN) are important factors." @default.
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• W2111656670 date "2012-04-01" @default.
• W2111656670 modified "2023-09-26" @default.
• W2111656670 title "Characteristics of HfZrO<inf>x</inf> gate stack engineering for reliability improvement on 28nm HK/MG CMOS technology" @default.
• W2111656670 cites W2004143355 @default.
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• W2111656670 doi "https://doi.org/10.1109/vlsi-tsa.2012.6210162" @default.
• W2111656670 hasPublicationYear "2012" @default.
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