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- W2111783129 abstract "By means of a quantum-mechanical phase-space distribution function and its corresponding Boltzmann equation, the free-carrier and electric-field distributions of one-dimensional semiconductor junctions ($nensuremath{-}p$, $pensuremath{-}{p}^{+}$, etc.) are evaluated. It is shown that quantum and exchange corrections, which have been neglected in the past, play an important role in the determination of the built-in electric field within the transition region, the region in which the doping concentration changes rapidly (from $n$-type to $p$-type material for instance). This is particularly true in cases of high doping concentrations, i.e., when carrier densities become degenerate. Exact expressions will be given for the maximum built-in electric field in case of abrupt junctions. It is also shown that the exchange effect induces a slight change in the position of the band edges which persists through the homogeneous (neutral) part of the junction far away from the transition region. A numerical example is given and the quantitative differences between heavily doped (degenerate) and nondegenerate (classical) junction characteristics (maximum electric field, built-in voltage and carrier concentration within the transition region) are determined. The theory is briefly generalized to encompass high-low junctions." @default.
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- W2111783129 date "1977-12-15" @default.
- W2111783129 modified "2023-10-03" @default.
- W2111783129 title "Quantum statistical theory of semiconductor junctions in thermal equilibrium" @default.
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- W2111783129 doi "https://doi.org/10.1103/physrevb.16.5405" @default.
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