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• W2111878314 endingPage "3752" @default.
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• W2111878314 abstract "Proton irradiation is used to probe the physics of 4H-silicon carbide (SiC) Schottky barrier diodes (SBDs) and negative channel metal oxide semiconductor (nMOS) capacitors for the first time. Both 4H-SiC SBD diodes and SiC MOS structures show excellent radiation tolerance under high-energy, high-dose proton exposure. Unlike for SiC JBS diodes, which show a strong increase in series resistance after proton irradiation, these SiC SBDs show very little forward bias I--V degradation after exposure to 63.3 MeV protons up to a fluence of 5/spl times/10/sup 13/ p/cm/sup 2/. An improvement in reverse leakage current after irradiation is also observed, which could be due to a proton annealing effect. The small but observable increase in blocking voltage for these SiC SBDs is attributed to a negative surface charge increase, consistent with earlier gamma results. The resultant Q/sub eff/ change of 4H-SiC nMOS capacitors under proton irradiation was used to quantify the radiation induced changes to the blocking voltage in the SBD diodes in MEDICI simulations, and showed a good agreement with the experimental data. Characterization of these capacitors also suggests that 4H-SiC MOS structures are radiation hard." @default.
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• W2111878314 date "2004-12-01" @default.
• W2111878314 modified "2023-09-27" @default.
• W2111878314 title "Proton radiation effects in 4H-SiC diodes and MOS capacitors" @default.
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• W2111878314 doi "https://doi.org/10.1109/tns.2004.839254" @default.
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