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• W2111930811 abstract "Dual gate CMOSFETs with high performance were successfully realized by using 2.8 nm N/sub 2/O-oxynitrides as gate dielectrics. Unlike other fabrication procedures, /sup 11/B/sup +/ ions instead of /sup 49/BF/sub 2//sup +/ were implanted into the gate electrodes of PMOSFETs. We demonstrated that boron diffusion through the 2.8 nm-oxynitrides is effectively blocked by the use of RTA. Substrate current due to hot-carrier effects was observed for NMOSFETs with T/sub ox/=2.8 nm and L=0.5 /spl mu/m even below 1 V. Gate-oxide leakage of surface-channel PMOSFETs is lower than that of NMOSFETs because of high barrier height for holes which significantly reduces hole direct tunneling compared with electron direct tunneling." @default.
• W2111930811 created "2016-06-24" @default.
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• W2111930811 date "2002-11-19" @default.
• W2111930811 modified "2023-09-23" @default.
• W2111930811 title "Direct tunneling N/sub 2/O gate oxynitrides for low-voltage operation of dual gate CMOSFETs" @default.
• W2111930811 cites W1848440189 @default.
• W2111930811 doi "https://doi.org/10.1109/iedm.1995.499350" @default.
• W2111930811 hasPublicationYear "2002" @default.
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