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- W2111995273 abstract "<para xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> In this letter, for the first time, the defects that are induced from the SiGe strain source/drain (S/D) in PMOSFET with 45-nm CMOS technology were investigated in detail. With the conventional charge pumping and the improved low gate-leakage gated-diode <formula formulatype=inline><tex>$(hbox{L}^{2}$</tex></formula>– <formula formulatype=inline><tex>$hbox{GD})$</tex></formula> measurements, we find that the uniaxial compressive stress from SiGe S/D generates a large number of acceptorlike interface states at the gate oxide/extension of S/D interface, thus enhancing the leakage current. Compared to defects that are caused by the relaxed <formula formulatype=inline><tex>$hbox{Si}_{1-x}hbox{Ge}_{x}$</tex></formula> on the conventional graded <formula formulatype=inline><tex>$hbox{Si}_{1-x}hbox{Ge}_{x}$</tex></formula> buffer layer, the SiGe S/D experienced results that are more serious. The acceptorlike interface states are suspected to be the Si dangling bonds broken by the stress. A schematic model is proposed to illustrate the effect of the stress comprehensively. </para>" @default.
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- W2111995273 date "2007-05-01" @default.
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- W2111995273 title "Investigation and Localization of the SiGe Source/Drain (S/D) Strain-Induced Defects in PMOSFET With 45-nm CMOS Technology" @default.
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- W2111995273 doi "https://doi.org/10.1109/led.2007.895446" @default.
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