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- W2112058649 abstract "The effect of defects within a single cell of a static random access memory (SRAM) is examined. All major types of faults, including bridging, transistor stuck-open and stuck-on, are examined. A significant fraction of all faults cause high IDDQ values to be observed. Faults leading to inter-cell coupling are identified. >" @default.
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- W2112058649 date "2002-12-31" @default.
- W2112058649 modified "2023-09-26" @default.
- W2112058649 title "Modeling of intra-cell defects in CMOS SRAM" @default.
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- W2112058649 doi "https://doi.org/10.1109/mt.1993.263145" @default.
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