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• W2112542716 endingPage "1832" @default.
• W2112542716 startingPage "1828" @default.
• W2112542716 abstract "Thin films of cerium dioxide were deposited by atomic layer deposition (ALD). Temperature ranges studied in detail were 175–375 °C and 225–350 °C for the Ce(thd)4 and Ce(thd)3phen (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate, phen = 1,10-phenanthroline) precursors, respectively. Ozone was used in both cases as oxygen source. Thickness, crystallinity and morphology of the CeO2 films were determined by UV-VIS spectroscopic, XRD and AFM measurements, respectively. Narrow ALD windows, i.e. temperature ranges with constant growth rate, were observed at temperatures 175–250 °C for Ce(thd)4 and 225–275 °C for Ce(thd)3phen. The growth rates of CeO2 inside the ALD windows were 0.32 Å (cycle)−1 and 0.42 Å (cycle)−1 for Ce(thd)4 and Ce(thd)3phen, respectively. CeO2 films grown on soda lime glass and Si(100) were polycrystalline and slightly oriented with the (200) and (111) peaks as the strongest reflections. TOF-ERD analysis of the Ce∶O ratio showed that the films were nearly stoichiometric but that they contained hydrogen (7–10 atom%), as well as some carbon and fluorine, as impurities." @default.
• W2112542716 created "2016-06-24" @default.
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• W2112542716 date "2002-04-29" @default.
• W2112542716 modified "2023-10-16" @default.
• W2112542716 title "Cerium dioxide buffer layers at low temperature by atomic layer deposition" @default.
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• W2112542716 doi "https://doi.org/10.1039/b108333c" @default.
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