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- W2112692895 abstract "In this study, we investigate the properties of Ti-Si-N films for the application as the heating layers in phase-change memory (PCM). The experimental results show that the resistivity of Ti-Si-N films can be varied by over six orders of magnitude from 4 10 18 . 2 − × to 2 10 9 . 3 × cm ⋅ Ω by increasing the flow rate ratio (N2/(N2+Ar)) from 0 to 10%. The controllability of resistivity might result from the concentration change from Ti-Si to mixture of TiN and Si3N4. Reversible switching was also successfully demonstrated by using a lateral PCM with these heating layers. The stability of the Ti-Si-N films at high temperatures implies that they can be used as the heating layers in the conventional vertical PCMs for current reduction." @default.
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- W2112692895 date "2009-03-01" @default.
- W2112692895 modified "2023-10-11" @default.
- W2112692895 title "Reactively sputtered Ti-Si-N films for application as heating layers for low-current phase-change memory" @default.
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- W2112692895 doi "https://doi.org/10.1088/1742-6596/152/1/012026" @default.
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