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- W2112977799 abstract "The authors report on the interface roughness of a series of thin InGaAs/InP multiple quantum wells (MQWs) grown with interruption sequences performed at both the lower and the upper interfaces. They compare spectrometric data collected at 2/spl deg/K with high-resolution transmission electron microscope images and show that the lower interface morphology (InP/InGaAs) originates only from the well known effect of P exchanging by As when first switching the gas species, but must take into account the effects of in-situ diffusion. Nothing similar should appear at the higher interface (InGaAs/InP) but a considerable amount of interface roughness is still present in HR-TEM images. It is shown that it originates from unperfected two-dimensional growth kinetics of InGaAs. >" @default.
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- W2112977799 date "2002-12-30" @default.
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- W2112977799 title "Experimental characterization of interface roughness in strained InGaAs/InP MQWs after a growth interruption sequence" @default.
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- W2112977799 doi "https://doi.org/10.1109/iciprm.1993.380650" @default.
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