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• W2113016744 abstract "The operating properties of flash memory with tunnel dielectrics, comprising silicon nitride or silicon nitride/silicon dioxide (N/O) stack and treated with various annealing temperatures, are studied. The present work indicates that flash devices with N/O stack tunnel dielectrics have better program/erase speed and reliability than those with single Si/sub 3/N/sub 4/. The stack tunnel dielectric composed of a thicker Si/sub 3/N/sub 4/ and a thinner SiO/sub 2/ exhibits better performance on flash memory operation. The flash devices having N/O stack tunnel dielectrics treated with lower annealing temperature show better performance on erase speed and charge retention but worse properties of read disturbance." @default.
• W2113016744 created "2016-06-24" @default.
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• W2113016744 date "2004-10-26" @default.
• W2113016744 modified "2023-09-27" @default.
• W2113016744 title "Improved performance of flash memory by silicon nitride/silicon dioxide stack tunnel dielectric" @default.
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• W2113016744 doi "https://doi.org/10.1109/ipfa.2004.1345611" @default.
• W2113016744 hasPublicationYear "2004" @default.
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