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- W2113104595 abstract "We report a normally-off GaN-based transistor using conductivity modulation, which we call GIT (gate injection transistor). This new device principle utilizes hole-injection from p-AlGaN to AlGaN/GaN heterojunction, which increases electron density in the depleted channel resulting in dramatic increase of the drain current owing to the conductivity modulation. The fabricated GIT exhibits the threshold voltage of 1.0V with high maximum drain current of 200mA/mm. The obtained on-state resistance (R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>on</sub> ·A) and off-state breakdown voltage (BV <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ds</sub> ) are 2.6mΩ·cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> and 640V, respectively. These values are the best ones ever reported for GaN-based normally-off transistors" @default.
- W2113104595 created "2016-06-24" @default.
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- W2113104595 date "2006-01-01" @default.
- W2113104595 modified "2023-09-27" @default.
- W2113104595 title "A Normally-off AlGaN/GaN Transistor with R<sub>on</sub>A=2.6m&#x003A9;cm<sup>2</sup> and BV<sub>ds</sub>=640V Using Conductivity Modulation" @default.
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- W2113104595 doi "https://doi.org/10.1109/iedm.2006.346930" @default.
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