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• W2113217039 abstract "We report on investigations of optical carrier generation in silicon nanocrystals embedded in an SiO${}_{2}$ matrix. Carrier relaxation and recombination processes are monitored by means of time-resolved induced absorption, using a conventional femtosecond pump-probe setup for samples containing different average sizes of nanocrystals (${d}_{mathrm{NC}}$ $=$ 2.5--5.5 nm). The electron-hole pairs generated by the pump pulse are probed by a second pulse over a broad spectral range (${E}_{mathrm{probe}}$ $=$ 0.95--1.35 or 1.6--3.25 eV), by which information on excited states is obtained. Under the same excitation conditions, we observe that the induced absorption intensity in the near-infrared range is a factor of $ensuremath{sim}$10 higher than in the visible range. To account for these observations, we model the spectral dependence of the induced absorption signal using an empirical $s{p}^{3}{d}^{5}{s}^{*}$ tight-binding technique, by which the spectrum can be well reproduced up to a certain threshold. For probe photon energies above this threshold (dependent on nanocrystal size), the induced absorption signal is found to feature a long-standing component, whereas the induced absorption signal for probe photon energies below this value vanishes within 0.5 ns. We explain this by self-trapping of excitons on surface-related states." @default.
• W2113217039 created "2016-06-24" @default.
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• W2113217039 date "2013-10-08" @default.
• W2113217039 modified "2023-09-27" @default.
• W2113217039 title "Carrier dynamics in Si nanocrystals in an SiO<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>matrix investigated by transient light absorption" @default.
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• W2113217039 doi "https://doi.org/10.1103/physrevb.88.155304" @default.
• W2113217039 hasPublicationYear "2013" @default.
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