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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2113228384> ?p ?o ?g. }

• W2113228384 endingPage "981" @default.
• W2113228384 startingPage "975" @default.
• W2113228384 abstract "We report on proton radiation effects on Si-nanocrystal (Si-NCs) MOS capacitors and nMOS transistors aiming at non-volatile memory applications. Irradiation experiments were conducted on NC MOS capacitors using protons of 1.5 MeV and 6.5 MeV and on NC nMOS transistors using protons of 1.5 MeV. The range of doses investigated was ~ 1 to ~ 100 Mrad (SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ). A 2-D layer of Si NCs with ~ 3 nm mean diameter and 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>12</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-2</sup> surface density was successfully achieved by low-energy (1 keV) ion-beam-synthesis in thin SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> layers. After irradiation, programmed capacitors are found to undergo bit flip while programmed transistors are not. Charge retention measurements at room temperature for the write and erase states of irradiated and non-irradiated samples reveal that a significant memory window exists at an extrapolated time of ten years even after an irradiation dose as high as 120 Mrad (SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ). The flat-band decay rate of the erase state in NC MOS capacitors does not depend on the irradiation-dose while the opposite occurs for the write state which is found to be directly dependent on D <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>it</sub> values after irradiation. These results clearly indicate that NC non-volatile memories (NVM) are promising radiation tolerant devices." @default.
• W2113228384 created "2016-06-24" @default.
• W2113228384 creator A5051466360 @default.
• W2113228384 creator A5052862025 @default.
• W2113228384 creator A5053698906 @default.
• W2113228384 creator A5056549906 @default.
• W2113228384 creator A5084238973 @default.
• W2113228384 creator A5088937977 @default.
• W2113228384 date "2007-08-01" @default.
• W2113228384 modified "2023-10-03" @default.
• W2113228384 title "Proton Radiation Effects on Nanocrystal Non-Volatile Memories" @default.
• W2113228384 cites W1540206583 @default.
• W2113228384 cites W1600162194 @default.
• W2113228384 cites W1969170269 @default.
• W2113228384 cites W1981901304 @default.
• W2113228384 cites W1982682012 @default.
• W2113228384 cites W2005805120 @default.
• W2113228384 cites W2009851040 @default.
• W2113228384 cites W2022575962 @default.
• W2113228384 cites W2027400113 @default.
• W2113228384 cites W2072096873 @default.
• W2113228384 cites W2086103622 @default.
• W2113228384 cites W2102797190 @default.
• W2113228384 cites W2129399840 @default.
• W2113228384 cites W2138534942 @default.
• W2113228384 cites W2153426106 @default.
• W2113228384 cites W2165297788 @default.
• W2113228384 cites W2166916040 @default.
• W2113228384 doi "https://doi.org/10.1109/tns.2007.902365" @default.
• W2113228384 hasPublicationYear "2007" @default.
• W2113228384 type Work @default.
• W2113228384 sameAs 2113228384 @default.
• W2113228384 citedByCount "5" @default.
• W2113228384 countsByYear W21132283842014 @default.
• W2113228384 countsByYear W21132283842017 @default.
• W2113228384 countsByYear W21132283842021 @default.
• W2113228384 crossrefType "journal-article" @default.
• W2113228384 hasAuthorship W2113228384A5051466360 @default.
• W2113228384 hasAuthorship W2113228384A5052862025 @default.
• W2113228384 hasAuthorship W2113228384A5053698906 @default.
• W2113228384 hasAuthorship W2113228384A5056549906 @default.
• W2113228384 hasAuthorship W2113228384A5084238973 @default.
• W2113228384 hasAuthorship W2113228384A5088937977 @default.
• W2113228384 hasConcept C111337013 @default.
• W2113228384 hasConcept C113196181 @default.
• W2113228384 hasConcept C121332964 @default.
• W2113228384 hasConcept C165801399 @default.
• W2113228384 hasConcept C171250308 @default.
• W2113228384 hasConcept C172385210 @default.
• W2113228384 hasConcept C175854130 @default.
• W2113228384 hasConcept C178790620 @default.
• W2113228384 hasConcept C185544564 @default.
• W2113228384 hasConcept C185592680 @default.
• W2113228384 hasConcept C192562407 @default.
• W2113228384 hasConcept C197162436 @default.
• W2113228384 hasConcept C49040817 @default.
• W2113228384 hasConcept C52192207 @default.
• W2113228384 hasConcept C54516573 @default.
• W2113228384 hasConcept C62520636 @default.
• W2113228384 hasConceptScore W2113228384C111337013 @default.
• W2113228384 hasConceptScore W2113228384C113196181 @default.
• W2113228384 hasConceptScore W2113228384C121332964 @default.
• W2113228384 hasConceptScore W2113228384C165801399 @default.
• W2113228384 hasConceptScore W2113228384C171250308 @default.
• W2113228384 hasConceptScore W2113228384C172385210 @default.
• W2113228384 hasConceptScore W2113228384C175854130 @default.
• W2113228384 hasConceptScore W2113228384C178790620 @default.
• W2113228384 hasConceptScore W2113228384C185544564 @default.
• W2113228384 hasConceptScore W2113228384C185592680 @default.
• W2113228384 hasConceptScore W2113228384C192562407 @default.
• W2113228384 hasConceptScore W2113228384C197162436 @default.
• W2113228384 hasConceptScore W2113228384C49040817 @default.
• W2113228384 hasConceptScore W2113228384C52192207 @default.
• W2113228384 hasConceptScore W2113228384C54516573 @default.
• W2113228384 hasConceptScore W2113228384C62520636 @default.
• W2113228384 hasIssue "4" @default.
• W2113228384 hasLocation W21132283841 @default.
• W2113228384 hasOpenAccess W2113228384 @default.
• W2113228384 hasPrimaryLocation W21132283841 @default.
• W2113228384 hasRelatedWork W1516019616 @default.
• W2113228384 hasRelatedWork W1557535892 @default.
• W2113228384 hasRelatedWork W1967838940 @default.
• W2113228384 hasRelatedWork W2010959989 @default.
• W2113228384 hasRelatedWork W2028931051 @default.
• W2113228384 hasRelatedWork W2035540237 @default.
• W2113228384 hasRelatedWork W2038299983 @default.
• W2113228384 hasRelatedWork W2052620797 @default.
• W2113228384 hasRelatedWork W2104615293 @default.
• W2113228384 hasRelatedWork W2605607574 @default.
• W2113228384 hasVolume "54" @default.
• W2113228384 isParatext "false" @default.
• W2113228384 isRetracted "false" @default.
• W2113228384 magId "2113228384" @default.
• W2113228384 workType "article" @default.