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- W2113245552 abstract "This paper describes TSNWFET devices with embedded Si1-xGex source/drain regions and different nanowire orientations. Thick Si1-xGex embedded source/drain and lang110rang channel orientation is found effective to enhance p-channel TSNWFET performance, while cause degradation for n-channel one. Thin Si1-xGex and lang100rang channel orientation is the preferred combination for keeping n-TSNWFET performance. With lang110rang channel orientation and thick Si1-xGex in source/drain, p-MOS current, for the first time, is even observed to exceed its n-type counterpart from the experiments" @default.
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- W2113245552 date "2006-01-01" @default.
- W2113245552 modified "2023-10-06" @default.
- W2113245552 title "Investigation of nanowire orientation and embedded Si/sub 1-x/Ge/sub x/ source/drain influence on Twin Silicon Nano-Wire Field Effect Transistor (TSNWFET)" @default.
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- W2113245552 doi "https://doi.org/10.1109/icsict.2006.306082" @default.
- W2113245552 hasPublicationYear "2006" @default.
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