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• W2113255554 abstract "Manipulated bias control of a selector to a memristor was demonstrated in Zn-doped amorphous SiOx (SZO) films, within which ZnOx/Zn nanoclusters were segregated. For the selector, namely diode-like (pre-forming) switching, the threshold voltage varied from 9 to 2.7 V, with a resistance ratio of ∼104, by tuning the concentration of ZnOx/Zn nanoclusters. Stable bipolar resistive switching was achieved by current-controlled RESET and voltage-controlled SET processes. The working mechanism of the selector was explained by a transport mechanism which involved the “generalized trap-assisted tunnelling” of electrons resulting from doping with ZnOx/Zn nanoclusters. The dual-switching-mode of SZO provides a promising application for 3D cross-bar RRAM." @default.
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• W2113255554 date "2014-01-01" @default.
• W2113255554 modified "2023-10-18" @default.
• W2113255554 title "Amorphous zinc-doped silicon oxide (SZO) resistive switching memory: manipulated bias control from selector to memristor" @default.
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• W2113255554 doi "https://doi.org/10.1039/c3tc32166e" @default.
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