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- W2113295181 abstract "Stable high-power CW operation of 1.3-μm InGaAsP/InP p-substrate buried crescent laser diodes (PBC-LD'S) has been realized, by controlling the front and rear facet reflectivities of the laser diode chips. The front facet reflectivity is reduced to 17 percent and the rear facet reflectivity is increased to 90 percent, by evaporating multilayer dielectric films (Si/Al <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> :17 percent, SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> /Si/SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> /Si/SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> :90 percent) on each facet. CW light output power of 50 mW is achieved up to 60°C. Aging tests have been carried out under automatic power control (APC) mode conditions of 50°C-30 mW, 40 mW, 50 mW, and 30°C-50 mW. All samples are operating stably in spite of junction-up configuration. The lifetimes are estimated to be more than <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2 times 10^{4}</tex> h for all conditions." @default.
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- W2113295181 date "1987-01-01" @default.
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- W2113295181 title "High-power high-reliability operation of 1.3 µm p-substrate buried crescent laser diodes" @default.
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- W2113295181 doi "https://doi.org/10.1109/jlt.1987.1075632" @default.
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