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• W2113456848 abstract "In this letter, we report germanium (Ge) p-channel MOSFETs with a thin gate stack of Ge oxynitride and low-temperature oxide (LTO) on bulk Ge substrate without a silicon (Si) cap layer. The fabricated devices show 2 /spl times/ higher transconductance and /spl sim/ 40% hole mobility enhancement over the Si control with a thermal SiO/sub 2/ gate dielectric, as well as the excellent subthreshold characteristics. For the first time, we demonstrate Ge MOSFETs with less than 100-mV/dec subthreshold slope." @default.
• W2113456848 created "2016-06-24" @default.
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• W2113456848 date "2003-04-01" @default.
• W2113456848 modified "2023-10-02" @default.
• W2113456848 title "Electrical characterization of germanium p-channel MOSFETs" @default.
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• W2113456848 doi "https://doi.org/10.1109/led.2003.810879" @default.
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