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• W2113460488 abstract "A new pinched-off cold FET method to extract the parasitic capacitances of FETs is proposed in this paper. The method is based on a physically meaningful depletion-layer model and the theoretical analysis of the two-port network for the pinched-off cold FETs. The parasitic gate capacitance (C/sub pg/) and the parasitic drain capacitance (C/sub pd/) of FETs are extracted using the linear regression technique associated with the frequency responses of Y-parameters. The extraction method can be applied to the small-signal equivalent-circuit modeling of the FETs including MESFETs, heterojunction FETs, and high-electron-mobility transistors. According to the new analytical method, the simulated S-parameters exhibit great agreement with the measured S-parameters for the equivalent-circuit models of FETs." @default.
• W2113460488 created "2016-06-24" @default.
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• W2113460488 date "2001-01-01" @default.
• W2113460488 modified "2023-10-09" @default.
• W2113460488 title "A new pinched-off cold-FET method to determine parasitic capacitances of FET equivalent circuits" @default.
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• W2113460488 doi "https://doi.org/10.1109/22.939921" @default.
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