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• W2113711272 endingPage "4219" @default.
• W2113711272 startingPage "4213" @default.
• W2113711272 abstract "A pentacene (C <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>22</sub> H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>14</sub> )-based high-voltage organic thin-film transistor (HVOTFT) was demonstrated on both a rigid and a flexible substrate. The HVOTFT showed minimal degradation of the current-voltage (I-V) characteristics under flexure. Consistent with the previous reports on amorphous silicon (a-Si) TFTs, the offset drain/source structure enabled high-voltage operation, allowing for the HVOTFT to switch very large drain-to-source voltages (VDS > 300 V) with a relatively lower controlling voltage (0 V <; V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> <; 20 V). The HVOTFT was evaluated with three different gate insulators to assess how the dielectric constant and interface states influence device performance. Due to the high electric field generated in the device, the HVOTFT suffered from impeded charge injection into the gated semiconductor channel, similar to that reported in a-Si-based high-voltage TFTs, as well as from a nonsaturating I-V characteristic behavior similar to the short-channel effects found in FETs. A field plate was implemented to improve charge injection into the gated semiconductor channel. Output characteristics of the HVOTFT were numerically corrected to demonstrate that the device I-V can be modeled with the existing Si-based FET models." @default.
• W2113711272 created "2016-06-24" @default.
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• W2113711272 date "2015-12-01" @default.
• W2113711272 modified "2023-09-30" @default.
• W2113711272 title "High-Voltage Organic Thin-Film Transistors on Flexible and Curved Surfaces" @default.
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• W2113711272 doi "https://doi.org/10.1109/ted.2015.2487991" @default.
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