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- W2113990904 abstract "We propose a new technique for fabricating 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with high inversion channel mobility. P atoms were incorporated into the SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /4H-SiC (0001) interface by postoxidation annealing using phosphoryl chloride (POCl <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> ). The interface state density near the conduction band edge of 4H-SiC was reduced significantly, and the peak field-effect mobility of lateral 4H-SiC MOSFETs on (0001) Si face was improved to 89 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /V · s by POCl <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> annealing at 1000°C." @default.
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- W2113990904 date "2010-07-01" @default.
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- W2113990904 title "Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide" @default.
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- W2113990904 doi "https://doi.org/10.1109/led.2010.2047239" @default.
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