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• W2114602440 abstract "Metal-oxide-semiconductor structures are fabricated on an n-type GaAs substrate at room temperature by means of plasma anodic oxidation of aluminium films evaporated on the GaAs substrate. Current and charge transient spectroscopies and low frequency C-U measurements are applied to the MOS capacitors. The optimum processing condition for the minimum interface-state-density is found to be related to the properties of the Al film. Three apparent activation energies of the dominant DLTS peak (Ec - 0.5 eV, Ec - 0.67 eV, Ec - 0.72 eV) for three concentrations of donors (1024, 2.7 × 1023, and 1.4 × 1022 m−3) are determined; the differences in the values of the energies can be estimated as a consequence of the Poole-Frenkel effect with an extrapolated value of the true energy Ec - 0.75 eV. From this point of view the observed DLTS peaks are attributed to the same defect, which can be connected with two simultaneous processes in the course of oxidation: (1) with the out migration of Ga atoms through the oxide layer and (ii) with the forming of a high resistivity O-compensated layer between the oxide and the semiconductor.Mittels anodischer Plasmaoxydation von Aluminiumschichten auf GaAs-Substraten werden Metall-Oxid-Halbleiterstrukturen auf einem n-leitenden GaAs-Substrat bei Zimmertemperatur prapariert. Strom- und Ladungstransientenspektroskopie und Niederfrequenz C-U- Messungen werden fur die Untersuchung der MOS-Kondensatoren benutzt. Es wird gefunden, das die optimalen Prozesbedingungen fur minimale Grenzflachenzustandsdichte mit den Eigenschaften der Al-Schicht verknupft sind. Drei auftretende Aktivierungsenergien des dominierenden DLTS-Maximums (Ec - 0,5 eV, Ec - 0,67 eV, Ec - 0,72 eV) fur drei Donatorkonzentrationen (1024, 2.7 × 1023, and 1.4 × 1022 m−3) werden bestimmt, die Differenzen in den Energiewerten lassen sich als Folge des Poole-Frenkel-Effekts berechnen, mit einem extrapolierten Wert der wahren Energie Ec - 0,75 eV. Von diesem Standpunkt aus werden die beobachteten DLTS-Maxima demselben Defekt zugeordnet, der mit zwei simultanen Prozessen im Verlauf der Oxydation verbunden sein kann : 1) mit der Migration von Ga-Atomen durch die Oxidschicht und 2) mit der Bildung einer hochohmigen O-Kompensationsschicht zwischen dem Oxid und dem Halbleiter." @default.
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• W2114602440 date "1988-04-16" @default.
• W2114602440 modified "2023-10-15" @default.
• W2114602440 title "Some properties of MIS structures prepared by plasma oxidation of Al layers on GaAs" @default.
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• W2114602440 doi "https://doi.org/10.1002/pssa.2211060239" @default.
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