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- W2114668374 abstract "This thesis presents experimental studies of InAs/InGaAs/GaAs quantum dot-in-awellinfrared photodetectors (DWELL QDIPs) grown by molecular beam epitaxy(MBE). Detailed studies were carried out to investigate the effects of designparameters on the performance of DWELL photodetectors, along with fundamentalstudies to determine the intraband optical and electronic properties of such structures.Using the results of these studies, an optimised structure was designed. In addition,the observation of a strong bias dependent spectral photoresponse demonstrated thecapability of post growth spectral tunability within the long wavelength IR (LWIR)atmospheric window.Various approaches were investigated for enhancing the performance of quantum dot(QD) based devices. The main shortcoming of QDIPs versus quantum well infraredphotodetectors (QWIPs) has been addressed i.e. the low dot density, which prohibitsthe high doping of these structures. The use of an antimonide surfactant to enhancethe dot density in DWELL QDIPs is presented here for the first time. Also a methodfor decreasing the dark current in QDIPs was investigated, via the use of wide bandgap AIGaAs barriers. Another technique using GaP strain balancing layers to reducethe strain in multilayer structures and allow the growth of >20 layer QD devices wasillustrated.The effects of intermixing via thermal annealing are also reported in for DWELLQDIPs. As part of this study, the possibility of using such a technique to shift thespectral photoresponse across the 8-12J..lm LWIR window is demonstrated, and it isshown that the performance still remains in a competitive range within the LWIRrange.Non-linear two photon absorption in QDIPs was demonstrated and studied. As aresult of this study, the capability of QDIPs to operate as quadratic detectors in thefar-infrared was established, which could prove very significant, since detectoravailability is reduced in that range.Finally, a novel approach to photovoltaic QDIPs was investigated experimentally,using a purpose built design in order to provide an internal electric field, whichpreferentially drives carriers in one direction." @default.
- W2114668374 created "2016-06-24" @default.
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- W2114668374 date "2007-01-01" @default.
- W2114668374 modified "2023-09-27" @default.
- W2114668374 title "New developments in InAs/InGaAs quantum dot-in-a-well infrared photodetectors" @default.
- W2114668374 hasPublicationYear "2007" @default.
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