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- W2114712085 abstract "Epitaxial ferroelectric films of the bismuth-layered perovskites SrBi/sub 2/Ta/sub 2/O/sub 9/ and Ba/sub 2/Bi/sub 4/Ti/sub 5/O/sub 18/ with uniform [116]- and [001]-orientation, resp., are grown by laser deposition on Si[100] substrates covered with suitable epitaxial buffer and electrode layers. These films have a component of the spontaneous polarization perpendicular to the film plane, as it is required in NV-FRAM applications. Crystallographic orientations are analysed by XRD, ferroelectrical properties including fatigue behaviour are determined, and microstructure investigations are performed by AFM and (high-resolution) TEM of plan-view and cross section samples. Specific, non-trivial in-plane orientations, multiple twins, and new types of lattice defects have been observed and are discussed." @default.
- W2114712085 created "2016-06-24" @default.
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- W2114712085 date "2002-11-11" @default.
- W2114712085 modified "2023-09-26" @default.
- W2114712085 title "Microstructure and properties of epitaxial ferroelectric bismuth-layered perovskite thin films grown on Si[100] with a polarization component perpendicular to the film plane" @default.
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- W2114712085 doi "https://doi.org/10.1109/isaf.2000.941537" @default.
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