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• W2114746857 abstract "The pulsed current-voltage ( <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>I</i> - <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> ) measurement technique with pulse times ranging from ~17 ns to ~6 ms was employed to study the effect of fast transient charging on the threshold voltage shift Delta <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>t</sub> of MOSFETs. The extracted Delta <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>t</sub> values are found to be strongly dependent on the band bending of the dielectric stack defined by the high-kappa and interfacial layer dielectric constants and thicknesses, as well as applied voltages. Various hafnium-based gate stacks were found to exhibit a similar trap density profile." @default.
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• W2114746857 date "2009-06-01" @default.
• W2114746857 modified "2023-10-16" @default.
• W2114746857 title "Pulsed $I_{d}$– $V_{g}$ Methodology and Its Application to Electron-Trapping Characterization and Defect Density Profiling" @default.
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• W2114746857 doi "https://doi.org/10.1109/ted.2009.2019384" @default.
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