FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2114985916> ?p ?o ?g. }

• W2114985916 abstract "Research on high-k (HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ) materials has been expanded significantly. However, MOSFETs with high-k gate dielectrics on silicon still have several problems with relatively low mobility of high-k devices in thin EOT regime compared to the universal curve. In this work, as an alternative of silicon substrate, InP and In <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.53</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.47</sub> As has been studied. W e present the material and electrical characteristics of TaN/HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /InP self-aligned n-MOSFET with PVD Si interface Passivation layer (IPL) under various post deposition anneal (PDA) conditions. We also demonstrated N-channel high-k InP and In <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.53</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.47</sub> As MOSFETs with good transistor behavior." @default.
• W2114985916 created "2016-06-24" @default.
• W2114985916 creator A5004112045 @default.
• W2114985916 creator A5021577830 @default.
• W2114985916 creator A5023117163 @default.
• W2114985916 creator A5023144434 @default.
• W2114985916 creator A5028191067 @default.
• W2114985916 creator A5034442301 @default.
• W2114985916 creator A5044004736 @default.
• W2114985916 creator A5052195451 @default.
• W2114985916 creator A5053514008 @default.
• W2114985916 creator A5054674996 @default.
• W2114985916 creator A5055949129 @default.
• W2114985916 creator A5058693888 @default.
• W2114985916 creator A5077590969 @default.
• W2114985916 creator A5083663104 @default.
• W2114985916 date "2008-06-01" @default.
• W2114985916 modified "2023-09-23" @default.
• W2114985916 title "Self-Aligned n-channel MOSFET on InP and In<inf>0.53</inf>Ga<inf>0.47</inf>As Using Physical Vapor Deposition HfO<inf>2</inf> and Silicon Interface Passivation Layer" @default.
• W2114985916 doi "https://doi.org/10.1109/drc.2008.4800749" @default.
• W2114985916 hasPublicationYear "2008" @default.
• W2114985916 type Work @default.
• W2114985916 sameAs 2114985916 @default.
• W2114985916 citedByCount "1" @default.
• W2114985916 crossrefType "proceedings-article" @default.
• W2114985916 hasAuthorship W2114985916A5004112045 @default.
• W2114985916 hasAuthorship W2114985916A5021577830 @default.
• W2114985916 hasAuthorship W2114985916A5023117163 @default.
• W2114985916 hasAuthorship W2114985916A5023144434 @default.
• W2114985916 hasAuthorship W2114985916A5028191067 @default.
• W2114985916 hasAuthorship W2114985916A5034442301 @default.
• W2114985916 hasAuthorship W2114985916A5044004736 @default.
• W2114985916 hasAuthorship W2114985916A5052195451 @default.
• W2114985916 hasAuthorship W2114985916A5053514008 @default.
• W2114985916 hasAuthorship W2114985916A5054674996 @default.
• W2114985916 hasAuthorship W2114985916A5055949129 @default.
• W2114985916 hasAuthorship W2114985916A5058693888 @default.
• W2114985916 hasAuthorship W2114985916A5077590969 @default.
• W2114985916 hasAuthorship W2114985916A5083663104 @default.
• W2114985916 hasConcept C111368507 @default.
• W2114985916 hasConcept C119599485 @default.
• W2114985916 hasConcept C127313418 @default.
• W2114985916 hasConcept C127413603 @default.
• W2114985916 hasConcept C133386390 @default.
• W2114985916 hasConcept C16317505 @default.
• W2114985916 hasConcept C165801399 @default.
• W2114985916 hasConcept C171250308 @default.
• W2114985916 hasConcept C172385210 @default.
• W2114985916 hasConcept C192562407 @default.
• W2114985916 hasConcept C24326235 @default.
• W2114985916 hasConcept C2777289219 @default.
• W2114985916 hasConcept C2778413303 @default.
• W2114985916 hasConcept C2779227376 @default.
• W2114985916 hasConcept C33574316 @default.
• W2114985916 hasConcept C49040817 @default.
• W2114985916 hasConcept C544956773 @default.
• W2114985916 hasConcept C57410435 @default.
• W2114985916 hasConcept C69544855 @default.
• W2114985916 hasConceptScore W2114985916C111368507 @default.
• W2114985916 hasConceptScore W2114985916C119599485 @default.
• W2114985916 hasConceptScore W2114985916C127313418 @default.
• W2114985916 hasConceptScore W2114985916C127413603 @default.
• W2114985916 hasConceptScore W2114985916C133386390 @default.
• W2114985916 hasConceptScore W2114985916C16317505 @default.
• W2114985916 hasConceptScore W2114985916C165801399 @default.
• W2114985916 hasConceptScore W2114985916C171250308 @default.
• W2114985916 hasConceptScore W2114985916C172385210 @default.
• W2114985916 hasConceptScore W2114985916C192562407 @default.
• W2114985916 hasConceptScore W2114985916C24326235 @default.
• W2114985916 hasConceptScore W2114985916C2777289219 @default.
• W2114985916 hasConceptScore W2114985916C2778413303 @default.
• W2114985916 hasConceptScore W2114985916C2779227376 @default.
• W2114985916 hasConceptScore W2114985916C33574316 @default.
• W2114985916 hasConceptScore W2114985916C49040817 @default.
• W2114985916 hasConceptScore W2114985916C544956773 @default.
• W2114985916 hasConceptScore W2114985916C57410435 @default.
• W2114985916 hasConceptScore W2114985916C69544855 @default.
• W2114985916 hasLocation W21149859161 @default.
• W2114985916 hasOpenAccess W2114985916 @default.
• W2114985916 hasPrimaryLocation W21149859161 @default.
• W2114985916 hasRelatedWork W1563442626 @default.
• W2114985916 hasRelatedWork W1956471281 @default.
• W2114985916 hasRelatedWork W1981774690 @default.
• W2114985916 hasRelatedWork W1995582090 @default.
• W2114985916 hasRelatedWork W1998003316 @default.
• W2114985916 hasRelatedWork W2012584677 @default.
• W2114985916 hasRelatedWork W2020218264 @default.
• W2114985916 hasRelatedWork W2029752620 @default.
• W2114985916 hasRelatedWork W2083582956 @default.
• W2114985916 hasRelatedWork W2087853646 @default.
• W2114985916 hasRelatedWork W2092129976 @default.
• W2114985916 hasRelatedWork W2095825714 @default.
• W2114985916 hasRelatedWork W2101340540 @default.
• W2114985916 hasRelatedWork W2115867548 @default.
• W2114985916 hasRelatedWork W2126685667 @default.
• W2114985916 hasRelatedWork W2142335386 @default.
• W2114985916 hasRelatedWork W2380234767 @default.
• W2114985916 hasRelatedWork W2540149846 @default.
• W2114985916 hasRelatedWork W2545813445 @default.
• W2114985916 hasRelatedWork W2546007536 @default.

• next