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- W2115021404 abstract "A new Be+ion implantation process for InSb photodiode fabrication has been developed, and performance levels comparable or superior to those obtained with standard diffused structures have been demonstrated. In addition to the implantation technique, an SiO 2 surface passivation is being developed to replace the former anodization process. The SiO 2 has demonstrated improved stability and repeatability, as well as surface state densities in the range of 1011cm-2eV-1, and resistivities of 2 times 10^{12}omega -cm at 300K. Data on many diodes show zero bias resistance-area products (R o A) of 5 times 10^{5} omega -cm2at 77K and over 1 times 10^{9} omega -cm2at 30K, which are the highest known values reported for such devices. Quantum efficiences near 80 percent at 77K and a wavelength of 5.4 µm, have also been measured. Data on high density (> 1000 elements) arrays indicate good uniformity of operation, with the standard deviation in R o A showing a 50 percent improvement over values obtained for Cd diffused structures." @default.
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- W2115021404 date "1981-01-01" @default.
- W2115021404 modified "2023-09-23" @default.
- W2115021404 title "High performance Be<sup>+</sup>implanted InSb photodiodes" @default.
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- W2115021404 doi "https://doi.org/10.1109/iedm.1981.190028" @default.
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