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- W2115280228 abstract "Thin thermally grown SiO2 layers have been enriched with Si up to ∼15 at.% by Si ion implantation at room temperature. X-ray photoelectron spectroscopy (XPS) was used to monitor the composition changes caused in the layers by bombardment with 3 keV Ar ions at elevated temperatures. Argon ion irradiation of pure SiO2 does not lead to the formation of Si nanoprecipitates. That was the case also for room-temperature Ar bombardment of Si-rich layers. Their ‘hot’ irradiation with Ar ions was found to enhance considerably the formation of segregated Si nanophase inclusions. The process starts at ∼500°C and becomes strongly pronounced at 650°C. At this temperature ion-beam-induced crystallization of Si nanoprecipitates may be achieved. The results obtained are explained in the framework of the physical model, based on the irradiation-enhanced diffusion of excess Si atoms. Copyright © 2002 John Wiley & Sons, Ltd." @default.
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- W2115280228 date "2002-01-01" @default.
- W2115280228 modified "2023-10-11" @default.
- W2115280228 title "XPS study of ion-beam-assisted formation of Si nanostructures in thin SiO2 layers" @default.
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- W2115280228 doi "https://doi.org/10.1002/sia.1447" @default.
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