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• W2115328704 abstract "Single halo p-MOSFETs with channel lengths down to 100 nm are optimized, fabricated, and characterized as part of this study. We show extensive device characterization results to study the effect of large angle V/sub T/ adjust implant parameters on device performance and hot carrier reliability. Results on both conventionally doped and single halo p-MOSFETs have been presented for comparison purposes." @default.
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• W2115328704 date "2002-06-01" @default.
• W2115328704 modified "2023-10-16" @default.
• W2115328704 title "Optimization and realization of sub-100-nm channel length single halo p-MOSFETs" @default.
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• W2115328704 doi "https://doi.org/10.1109/ted.2002.1003752" @default.
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