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• W2115387713 abstract "The fabrication of porous Si-based Er-doped light-emitting devices is a very promising developing field for all-silicon light emitters. However, while luminescence of Er-doped porous silicon devices has been demonstrated, very little attention has been devoted to the doping process itself. We have undertaken a detailed study of this process, examining the porous silicon matrix from several points of view during and after the doping. In particular, we have found that the Er-doping process shows a threshold level which, as evidenced by the cross correlation of the various techniques used, does depend on the sample thickness and on the doping parameters." @default.
• W2115387713 created "2016-06-24" @default.
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• W2115387713 date "2012-07-09" @default.
• W2115387713 modified "2023-09-27" @default.
• W2115387713 title "Characterization of Er in porous Si" @default.
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• W2115387713 doi "https://doi.org/10.1186/1556-276x-7-376" @default.
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