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- W2115503416 abstract "We propose a novel memory configuration using tunable barrier and estimate its frequency response to engineer ever fast and robust nonvolatile memory devices. A quantum-classical approach proves that the lifetime of the charge stored on the semiconductor quantum dot is considerably higher when compared to the normal floating gate non-volatile memories, and the design also promises very high immunity towards thermal noise. A brief workout presented enables the design of the memory element by subtly modifying an existing single electron transistor design." @default.
- W2115503416 created "2016-06-24" @default.
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- W2115503416 date "2008-08-01" @default.
- W2115503416 modified "2023-09-25" @default.
- W2115503416 title "Single-Electron Transistor-Tunable Tunnel Barrier Based Non-Volatile Memory" @default.
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- W2115503416 doi "https://doi.org/10.1109/nano.2008.214" @default.
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