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• W2115648836 startingPage "7252" @default.
• W2115648836 abstract "The morphology of growth pyramids on Si(111) facets has been studied with an atomic force microscope. These facets with pyramids are formed upon chemical vapor deposition (CVD) growth on a hemispherical substrate. Spiral as well as concentric step edge patterns have been observed on the growth pyramids. Based on the step edge patterns the origin of the pyramids is attributed to different types of dislocations. Step edge patterns indicate that growth during CVD is governed by step edge processes and that surface diffusion is not rate limiting. The completely different growth mechanism of molecular-beam epitaxy (MBE) is illustrated by MBE overgrowth of a silicon layer on top of the CVD layer. MBE growth parameters have been studied by comparing the growth pyramid morphology with simulation results." @default.
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• W2115648836 date "1998-03-15" @default.
• W2115648836 modified "2023-10-17" @default.
• W2115648836 title "Growth pyramids on Si(111) facets: A CVD and MBE study" @default.
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• W2115648836 doi "https://doi.org/10.1103/physrevb.57.7252" @default.
• W2115648836 hasPublicationYear "1998" @default.
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