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- W2115668846 abstract "Summary form only given. The problem of premature source-drain breakdown in thin SOI FETs is studied, both numerically with PISCES and analytically, with the gate voltages set so that the device is off. The analysis indicates that an LDD structure is required in order to improve the source-drain breakdown in thin SOI FETs. The LDD is needed even at comparatively long gate lengths, especially as the quality of the LDD will be even greater. >" @default.
- W2115668846 created "2016-06-24" @default.
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- W2115668846 date "2003-01-13" @default.
- W2115668846 modified "2023-09-28" @default.
- W2115668846 title "Source-drain breakdown in thin SOI transistors" @default.
- W2115668846 cites W2048166427 @default.
- W2115668846 doi "https://doi.org/10.1109/soi.1989.69744" @default.
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