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• W2115705802 abstract "A theoretical study of the evolution of point defects in the first stages of porous silicon formation by anodizing of crystalline silicon in a hydrofluoric acid solution is reported. A model of interactions between intrinsic point defects and impurities in the near-surface region of semiconductors during formation of pores is proposed. It is shown that a redistribution of defects and the formation of areas with different concentrations of vacancy-type defects may be the reason for formation of a porous structure. The generation rate of vacancies due to reactions of the silicon surface states with the HF acid as a function of main parameters of the system, such as the concentration of holes, the HF concentration, and the anodic current, is presented." @default.
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• W2115705802 date "1995-01-16" @default.
• W2115705802 modified "2023-09-26" @default.
• W2115705802 title "Changes in the Creation of Point Defects Related to the Formation of Porous Silicon" @default.
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• W2115705802 doi "https://doi.org/10.1002/pssa.2211470109" @default.
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