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- W2115768652 abstract "This paper describes a successfully developed field-modulating plate (FP) InGaP MESFET with an extremely high breakdown voltage of 100 V. The FP-FET, consisting of a 2.62 mm gate width, delivered an output power of 4.3 W and an output power density of 1.6 W/mm at 1.95 GHz operated at a drain bias (Vd) of 55 V. A low 3rd-order intermodulation distortion (IM3) of -31 dBc was also achieved at 8 dB back-off from saturation power. These results show the developed FET is suited for applications in the next generation cellular base station." @default.
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- W2115768652 date "2002-11-13" @default.
- W2115768652 modified "2023-09-27" @default.
- W2115768652 title "Field-modulating plate (FP) InGaP MESFET with high breakdown voltage and low distortion" @default.
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- W2115768652 doi "https://doi.org/10.1109/rfic.2001.935664" @default.
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