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- W2115797589 abstract "The epitaxial lift-off (ELO) method is in general considered to be very suitable for separation of the thin epilayer from its substrate. The used method is very gentle and hardly affects the substrate. We present further improvements on this method resulting in successful separation of crack free thin films as large as 2 substrates. Re-use of the substrates has been investigated with two dimensional optical step profiling to determine the roughness after the different surface cleaning procedures and after the ELO. Also the quality of epilayers after growing on used substrates is determined. In this paper it is demonstrated that substrates can be used several times without loss of epilayer quality." @default.
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- W2115797589 date "2002-12-17" @default.
- W2115797589 modified "2023-09-25" @default.
- W2115797589 title "Re-use of GaAs substrates for epitaxial lift-off III-V solar cells" @default.
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- W2115797589 doi "https://doi.org/10.1109/wcpec.1994.520741" @default.
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