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• W2115802693 abstract "The influence of the fin width on substrate-to-gate coupling in long-channel silicon-on-insulator triple-gate transistors is investigated. A complementary analysis, taking into account both the front coupling (variation of the front-channel threshold voltage V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T1</sub> , as a function of the substrate bias V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G2</sub> ) and back coupling (variation of the back-channel threshold voltage V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T2</sub> ) as a function of the front-gate bias V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G1</sub> ) characteristics has been carried out. It is shown that the back coupling, as opposed to the front coupling, is highly sensitive to the fin width in narrow-channel devices and can even be used in fin width extraction. Simple analytical 2-D models for the body potential, V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T1</sub> , and V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T2</sub> have been developed to clarify the experimental data, showing in particular the gradual control of the back interface potential by the lateral gates in narrow fins. The model stands as a 2-D generalization of the Lim and Fossum's well-known 1-D interface coupling model" @default.
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• W2115802693 date "2007-04-01" @default.
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• W2115802693 title "A Two-Dimensional Model for Interface Coupling in Triple-Gate Transistors" @default.
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• W2115802693 doi "https://doi.org/10.1109/ted.2007.892364" @default.
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