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• W2115841380 abstract "In this letter, we utilize an electrical analysis method to develop a TaN thin film resistor with a stricter spec and near-zero temperature coefficient of resistance (TCR) for car-used electronic applications. Simultaneously, we also propose a physical mechanism mode to explain the origin of near-zero TCR for the TaN thin film resistor (TFR). Through current fitting, the carrier conduction mechanism of the TaN TFR changes from hopping to surface scattering and finally to ohmic conduction for different TaN TFRs with different TaN microstructures. Experimental data of current–voltage measurement under successive increasing temperature confirm the conduction mechanism transition. A model of TaN grain boundary isolation ability is eventually proposed to influence the carrier transport in the TaN thin film resistor, which causes different current conduction mechanisms." @default.
• W2115841380 created "2016-06-24" @default.
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• W2115841380 date "2014-04-11" @default.
• W2115841380 modified "2023-10-18" @default.
• W2115841380 title "Surface scattering mechanisms of tantalum nitride thin film resistor" @default.
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• W2115841380 doi "https://doi.org/10.1186/1556-276x-9-177" @default.
• W2115841380 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/4030298" @default.
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