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• W2115928596 abstract "A CrN buffer layer was introduced to 6H-SiC substrate to aid the subsequent hydride vapor phase epitaxial growth of GaN. Crystallinities of GaN layers grown on both Si- and C-terminated surfaces of 6H-SiC wafers with and without CrN layers were compared. On Si-terminated SiC, CrN formed with a trigonal morphology, indicating a good crystallographic relationship with growth along the ⟨111⟩ axis. CrN formed randomly on C-terminated SiC, leading to the subsequent GaN growth occurring with no preferred orientation, suggesting deteriorated crystallinity. High-quality GaN layers were grown on the CrN buffered Si-terminated SiC." @default.
• W2115928596 created "2016-06-24" @default.
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• W2115928596 date "2012-01-01" @default.
• W2115928596 modified "2023-10-18" @default.
• W2115928596 title "Surface Polarity Effects on the Hydride Vapor Phase Epitaxial Growth of GaN on 6H-SiC with a Chrome Nitride Buffer Layer" @default.
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• W2115928596 doi "https://doi.org/10.1149/2.014205esl" @default.
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