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• W2116427497 abstract "Ni-Fe alloy films of about 100 nm in thickness were deposited on MgO(001) substrates at 250°C by d.c. plasma sputtering at 2.5 kV in pure Ar gas by applying a Ni0.3Fe0.7(Invar) or Ni0.2Fe0.8 target. A d.c. bias voltage Vs between 0 and −180 V was applied to the substrate during deposition. The structure and composition of the films were investigated by X-ray photoelectron spectroscopy (XPS), and by cross sectional transmission electron microscopy (XTEM). The resistance, its temperature coefficient TCR (150 to 300K) and saturation magnetization 4πMs at 300 K were measured as a function of Vs. With the use of Ni0.3Fe0.7 target, Ni1−xFex films with x between 0.68±0.03 and 0.73±0.03, can be prepared where x was weakly dependent on Vs. The film is epitaxially grown mainly with FCC-NiFe(001)[010]∥MgO(001)[010] accompanied with the initial thin layer of about 5 to 10 nm in thickness with BCC-NiFe(001)[110]∥MgO(001)[100] at the interface at Vs values studied. Maximum TCR and minimum resistance are observed between Vs=−120 to −160 V. 4πMs takes greater value at Vs≥120 V. In the case of Ni0.2Fe0.8 target at Vs=−120 V, Ni1−xFex films with x=0.80±0.03 are entirely grown in a BCC structure with NiFe(001)[110]∥MgO(001)[100]." @default.
• W2116427497 created "2016-06-24" @default.
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• W2116427497 date "1999-06-01" @default.
• W2116427497 modified "2023-10-02" @default.
• W2116427497 title "Growth structure and properties of Fe rich Fe-Ni alloy films deposited on MgO(001) by d.c.-biased plasma-sputtering" @default.
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• W2116427497 doi "https://doi.org/10.1016/s0040-6090(98)01731-3" @default.
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