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- W2116430513 abstract "InAs/AlSb/AlGaSb heterojunction backward diodes are promising detectors for millimeter-wave imaging applications due to their high sensitivity, low noise, and high cutoff frequency. By using a device heterostructure with a thin (11 Å) barrier layer, δ-doped cathode, and optimized Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> Sb anode composition (x=12%), in conjunction with submicron (0.4×0.4 μm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> ) active area, fabricated detectors have demonstrated DC curvatures of -47 V <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> and record unmatched sensitivities of 4600 V/W at 94 GHz. Impedance-matched sensitivities of 49,700 V/W at 94 GHz are projected from on-wafer S-parameter and sensitivity measurements. These detectors have measured junction resistances of 814 Ω·μm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> and capacitances of 15 fF/μm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> . A record low NEP <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>min</sub> of 0.18 pW/Hz <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1/2</sup> has been projected under conjugate matching conditions. This study demonstrates the potential of Sb-heterostructure backward diodes as ultra-low-noise millimeter-wave direct detectors." @default.
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- W2116430513 date "2011-05-01" @default.
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- W2116430513 title "Sub-Micron Area Heterojunction Backward Diode Millimeter-Wave Detectors With 0.18 ${rm pW/Hz}^{1/2}$ Noise Equivalent Power" @default.
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- W2116430513 doi "https://doi.org/10.1109/lmwc.2011.2123878" @default.
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