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• W2116688594 abstract "Ultralarge-scale single-layer graphene (SLG) sheets are obtained by chemically reduction process in aqueous media. The resulting SLG sheets are investigated by atomic force microscopy (AFM), Raman spectroscopy, X-ray photoelectron spectroscopic. Based on the ultralarge SLG sheets, the graphene FETs are fabricated using SLG sheets and networked graphene (NW) sheets, respectively. The electrical characterizations indicate that the NW devices exhibit higher carrier mobility as compared to SLG devices. Moreover, the subsequent thermal annealing process further improves the effective hole mobility to ~0.55 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /V·s. This study demonstrates a simple way to obtain graphene transistors with high mobility, which provides a promising application in printable graphene-based nanoelectronics." @default.
• W2116688594 created "2016-06-24" @default.
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• W2116688594 date "2011-05-01" @default.
• W2116688594 modified "2023-09-27" @default.
• W2116688594 title "Fabrication and Characterization of Networked Graphene Devices Based on Ultralarge Single-Layer Graphene Sheets" @default.
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• W2116688594 doi "https://doi.org/10.1109/tnano.2010.2047263" @default.
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