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• W2116715430 abstract "Silicon-carbide-based MOS capacitors were formed on either 3C (epitaxial on Si) or 4H substrates and using SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> gate dielectrics both with and without interfacial nitrogen. The charge trapping properties of these structures were examined after exposure to ionizing radiation. In all cases interfacial nitrogen results in improved trap density and increased oxide charge trapping. For equivalent nitrogen content, 3C-based devices exhibit more charge trapping than the 4H-based equivalents." @default.
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• W2116715430 date "2009-12-01" @default.
• W2116715430 modified "2023-09-26" @default.
• W2116715430 title "Charge Trapping Properties of 3C- and 4H-SiC MOS Capacitors With Nitrided Gate Oxides" @default.
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• W2116715430 doi "https://doi.org/10.1109/tns.2009.2031604" @default.
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