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• W2116729688 abstract "This paper reviews the principles and status of AlGaAs/GaAs heterojunction bipolar transistor technology. Comparisons of this technology with Si bipolar transistor and GaAs field-effect transistor technologies are made. Epitaxial materials, fabrication processes, transistor DC and RF characteristics, and modeling of AlGaAs/GaAs HBT's are described. Key areas of HBT application are also highlighted.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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• W2116729688 date "1993-01-01" @default.
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• W2116729688 title "GaAs-based heterojunction bipolar transistors for very high performance electronic circuits" @default.
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• W2116729688 doi "https://doi.org/10.1109/5.248960" @default.
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