Matches in SemOpenAlex for { <https://semopenalex.org/work/W2116742623> ?p ?o ?g. }
Showing items 1 to 75 of
75
with 100 items per page.
- W2116742623 endingPage "673" @default.
- W2116742623 startingPage "661" @default.
- W2116742623 abstract "The interaction part to the chemical potential in doped semiconductors which is well-suited to describe the gap shrinkage is calculated in the random-phase approximation (RPA). The numerical results are compared with several approximate formulas to be approached within certain ranges in the density-temperature plane. The numerical calculations are performed for n-doped Si and GaAs being representatives of typical indirect and direct materials. Both behave completely different: in the former the gap shift is nearly independent of temperature due to the dominance of short-wavelength screening, where in direct semiconductors the long-wavelength screening leads to a strongly temperature-dependent gap shift. The fraction of the impurity contribution to the total gap shrinkage behaves different in both types of materials, too. Der Wechselwirkungsanteil zum chemischen Potential in dotierten Halbleitern, der geeignet ist, die Gapschrumpfung zu beschreiben, wird in der “random-phase approximation” (RPA) berechnet. Die numerischen Ergebnisse werden mit verschiedenen Näherungsformeln verglichen, die in bestimmten Bereichen in der Dichte-Temperatur-Ebene erreicht werden. Die numerischen Rechnungen wurden für n-dotiertes Si und GaAs ausgeführt, beide Substanzen vertreten typische indirekte bzw. direkte Halbleitermaterialien. Beide verhalten sich völlig unterschiedlich: in den ersteren ist der Gapshift nahezu temperaturunabhängig infolge des Vorherrschens von Abschirmung durch kurze Wellenlängen. In direkten Halbleitern hingegen führt die Abschirmung durch lange Wellenlängen zu einem stark temperaturabhängigen Gapshift. Der Anteil des Störstellen-beitrages zur gesamten Gapschrumpfung verhält sich in beiden Materialien ebenfalls unterschiedlich." @default.
- W2116742623 created "2016-06-24" @default.
- W2116742623 creator A5019550245 @default.
- W2116742623 creator A5048717068 @default.
- W2116742623 date "1985-08-01" @default.
- W2116742623 modified "2023-09-23" @default.
- W2116742623 title "Gap Shift in Doped Semiconductors at Finite Temperatures" @default.
- W2116742623 cites W1971401115 @default.
- W2116742623 cites W1979931440 @default.
- W2116742623 cites W1981614824 @default.
- W2116742623 cites W1981978932 @default.
- W2116742623 cites W1983285605 @default.
- W2116742623 cites W1985066465 @default.
- W2116742623 cites W1989064841 @default.
- W2116742623 cites W1994772776 @default.
- W2116742623 cites W2010022344 @default.
- W2116742623 cites W2015214892 @default.
- W2116742623 cites W2031278725 @default.
- W2116742623 cites W2058443603 @default.
- W2116742623 cites W2068442186 @default.
- W2116742623 cites W2070291777 @default.
- W2116742623 cites W2072413762 @default.
- W2116742623 cites W2074942700 @default.
- W2116742623 cites W2077953740 @default.
- W2116742623 cites W2078099125 @default.
- W2116742623 cites W2080809238 @default.
- W2116742623 cites W2082964730 @default.
- W2116742623 cites W2085339560 @default.
- W2116742623 doi "https://doi.org/10.1002/pssb.2221300230" @default.
- W2116742623 hasPublicationYear "1985" @default.
- W2116742623 type Work @default.
- W2116742623 sameAs 2116742623 @default.
- W2116742623 citedByCount "21" @default.
- W2116742623 crossrefType "journal-article" @default.
- W2116742623 hasAuthorship W2116742623A5019550245 @default.
- W2116742623 hasAuthorship W2116742623A5048717068 @default.
- W2116742623 hasConcept C108225325 @default.
- W2116742623 hasConcept C113196181 @default.
- W2116742623 hasConcept C121332964 @default.
- W2116742623 hasConcept C184779094 @default.
- W2116742623 hasConcept C185592680 @default.
- W2116742623 hasConcept C26873012 @default.
- W2116742623 hasConcept C43617362 @default.
- W2116742623 hasConcept C49040817 @default.
- W2116742623 hasConcept C57863236 @default.
- W2116742623 hasConceptScore W2116742623C108225325 @default.
- W2116742623 hasConceptScore W2116742623C113196181 @default.
- W2116742623 hasConceptScore W2116742623C121332964 @default.
- W2116742623 hasConceptScore W2116742623C184779094 @default.
- W2116742623 hasConceptScore W2116742623C185592680 @default.
- W2116742623 hasConceptScore W2116742623C26873012 @default.
- W2116742623 hasConceptScore W2116742623C43617362 @default.
- W2116742623 hasConceptScore W2116742623C49040817 @default.
- W2116742623 hasConceptScore W2116742623C57863236 @default.
- W2116742623 hasIssue "2" @default.
- W2116742623 hasLocation W21167426231 @default.
- W2116742623 hasOpenAccess W2116742623 @default.
- W2116742623 hasPrimaryLocation W21167426231 @default.
- W2116742623 hasRelatedWork W130882989 @default.
- W2116742623 hasRelatedWork W134338187 @default.
- W2116742623 hasRelatedWork W1977693435 @default.
- W2116742623 hasRelatedWork W1997086491 @default.
- W2116742623 hasRelatedWork W2006715554 @default.
- W2116742623 hasRelatedWork W2018156315 @default.
- W2116742623 hasRelatedWork W2070677407 @default.
- W2116742623 hasRelatedWork W2093181719 @default.
- W2116742623 hasRelatedWork W2095055141 @default.
- W2116742623 hasRelatedWork W4311550151 @default.
- W2116742623 hasVolume "130" @default.
- W2116742623 isParatext "false" @default.
- W2116742623 isRetracted "false" @default.
- W2116742623 magId "2116742623" @default.
- W2116742623 workType "article" @default.