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• W2116744931 abstract "Abstract (Ba,Sr)RuO3(BSR) electrodes were deposited on n-type Si (100) substrates using a single cocktail solution by liquid delivery metalorganic chemical vapor deposition (LDMOCVD). The BSR films deposited at 500°C were crystallized with the preferred orientation of (110) and any peaks except BSR did not show after annealing up to 750°C in oxygen ambient. The resistivity of BSR films annealed in oxygen ambient was about 840 μΩ-cm irrespective of annealing temperature and pressure. The BSR electrodes shown structural stability with annealing temperature and pressure in oxygen at high temperature are possible for integration of high dielectric constant materials." @default.
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• W2116744931 date "2001-01-01" @default.
• W2116744931 modified "2023-10-18" @default.
• W2116744931 title "Structural stability of metalorganic chemical vapor deposited (Ba,Sr)RuO3 electrodes for integration of high dielectric memory devices" @default.
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• W2116744931 doi "https://doi.org/10.1080/10584580108015660" @default.
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