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• W2116747842 abstract "This paper presents characterization of power LDMOS using device simulation and analytical modeling. Features of the LDMOS such as graded channel and quasi-saturation effect which result in a peculiar behavior on capacitance and nonlinear LDD resistance are analyzed and modeled using device simulation. A compact model for LDMOS is implemented in HSPICE based on additional lumped elements, combined with the BSIM3 MOSFET model." @default.
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• W2116747842 date "2002-11-13" @default.
• W2116747842 modified "2023-09-23" @default.
• W2116747842 title "RF LDMOS characterization and its compact modeling" @default.
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• W2116747842 doi "https://doi.org/10.1109/mwsym.2001.967053" @default.
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