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- W2116765710 abstract "A new low voltage nonvolatile memory cell has been fabricated using standard CMOS/SOS processing. The cell can be programmed at 10V, conducts 400µA when programmed, and can be electrically erased in 10 ms. Using this cell, a 2K prototype EAROM has been built which dissipates only 50 µW @5V, retains data for 17.3 years at 125°C, and has endurance in excess of 300 write/erase cycles." @default.
- W2116765710 created "2016-06-24" @default.
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- W2116765710 date "1978-01-01" @default.
- W2116765710 modified "2023-09-25" @default.
- W2116765710 title "A CMOS/SOS electrically alterable read only memory" @default.
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- W2116765710 doi "https://doi.org/10.1109/iedm.1978.189424" @default.
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