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- W2116792058 abstract "The effects of radiation damage in two silicon p - i - n photodiodes fabricated from high resistivity material have been studied. The devices have been irradiated by 1 MeV neutrons to three different fluences up to . Current, capacitance and charge measurements were performed prior to irradiation and soon after. Our results indicate that the damage has degraded the charge-collection efficiency, that the devices have undergone type inversion from n-type to apparent p-type at fluences as low as , and that the substrate material has become somewhat `relaxation-like' after irradiation. It is suggested here that irradiated silicon is relaxation material." @default.
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- W2116792058 date "1997-10-01" @default.
- W2116792058 modified "2023-10-18" @default.
- W2116792058 title "Effects of radiation damage in silicon p - i - n photodiodes" @default.
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- W2116792058 doi "https://doi.org/10.1088/0268-1242/12/10/003" @default.
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