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• W2116793014 abstract "Theoretical calculations have been developed for a two-dimensional electron gas FET (TEGFET) constituted by a AlGaAs (n)-GaAs (n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-</sup> or p <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-</sup> ) heterostructure in which the Schottky gate is deposited on the AlGaAs(n) top layer. The theory takes into account: i) the subband splitting in the two-dimensional electron gas (2-DEG); and ii) the existence of an undoped AlGaAs spacer layer which has been found to enhance the electron mobility. The sheet carrier concentration of the TEGFET has been calculated, and a simple analytical formula has been established for the charge control in large and small gate FET." @default.
• W2116793014 created "2016-06-24" @default.
• W2116793014 creator A5004341847 @default.
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• W2116793014 date "1982-06-01" @default.
• W2116793014 modified "2023-10-09" @default.
• W2116793014 title "Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET" @default.
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• W2116793014 doi "https://doi.org/10.1109/t-ed.1982.20813" @default.
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